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svf1n60am /mj /b/d/ f /h _dat asheet hangzhou silan microelectronics co.,ltd rev: 1. 9 20 1 2.0 7.2 7 h ttp://www.silan.com.cn page 1 of 12 nomenclature ordering info rmation part no. package marking material packing svf1n60a m to - 251d - 3l svf1n60a m pb free tube svf1n60a m j to - 251j - 3l svf1n60a m j pb free tube svf1n60abtr to - 92 - 3l 1n60a pb free ammo svf1n60ad to - 252 - 2l svf1n60a d pb free t ube SVF1N60ADTR to - 252 - 2l svf1n6 0a d pb free tape & reel svf1n60af to - 220f - 3l svf1n60af pb free tube svf1n60ah sot - 223 - 3l svf1n60ah pb free tape & reel 1 a , 600v n - channel mosfet general description svf1n60am/ mj/ b/d/ f /h is an n - channel enhancement mode power mos field effect transistor which is produced using silan proprietary f - cell tm structure v dmos technology. the improved planar stripe cell and the i mpr oved guard ring terminal have been especially tailored to minimize on - state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are widely used in ac - dc power supplier s, dc - dc converters and h - bridge pwm motor drivers. features ? 1 a,600v,r ds(on) typ. = 6. 8 ? @v gs =10v ? low gate charge ? low crss ? fast switching ? improved dv/dt capability
silan microelectronics svf1n60am /mj /b/d/ f /h _dat asheet hangzhou silan microelectronics co.,ltd rev: 1. 9 20 1 2.0 .2 h ttp://.silan.com.cn page 2 o 12 absolute maximum ratings (t c 25 characteristics symbol r ating unit svf1n 60a m /d svf1n 60mj svf1n 60a b svf1n 60af svf1n 60ah drain - source voltage v ds 600 v gate - source voltage v gs 30 v drain current t c 25 c i d 1.0 a t c 100 c 0.6 drain current pulsed i dm .0 a poer dissipation (t c 25 thermal characteristics characteristics symbol r ating unit svf1n 60a m /d svf1n 60mj svf1n 60a b svf1n 60af svf1n 60ah t h ermal resistance, junction - to - case r jc ja electrical characteristics (tc25 characteristics symbol test conditions min . typ . max . unit drain - s ource b reakdon v oltage b vdss v gs 0v, i d 250a 600 -- -- v d ra in - source leakage current i dss v ds 600 v, v gs 0v -- -- 1 .0 a gate - s ource l eak age c urrent i gss v gs 30 v , v ds 0 v -- -- 10 0 na gate threshold v oltage v gs(th) v gs v ds , i d 250a 2 .0 -- .0 v static drain - s ource o n s tate r esistance r ds(on) v gs 10 v, i d 0.5 a -- 6. .1 ? ?
silan microelectronics svf1n60am /mj /b/d/ f /h _dat asheet hangzhou silan microelectronics co.,ltd rev: 1. 9 20 1 2.0 .2 h ttp://.silan.com.cn page 3 o 12 source - drain diode ratings and characteristics characteristics symbol test conditions min . typ . max . unit continuous source current i s integral reverse p-n junction diode in the mosfet -- -- 1.0 a pulsed sourc e current i sm -- -- .0 diode forard voltage v sd i s 1.0a,v gs 0v -- -- 1. 5 v reverse recovery time t rr i s 1. 0 a,v gs 0v, di f /dt100a/ s ( note 2) -- 1 9 0 -- ns reverse recovery charge rr -- 0. 53 -- c notes : 1. l= 30 mh , i as =1. 74a, v dd = 110 v, r g =25 ? 300s,duty cycle2%; typical characteristics figure 1. on-region characteristics figure 2. transer characteristics drain current C C C C C ?) drain current C C C
silan microelectronics svf1n60am /mj /b/d/ f /h _dat asheet hangzhou silan microelectronics co.,ltd rev: 1. 9 20 1 2.0 .2 h ttp://.silan.com.cn page o 12 typical characteristics (continued) figure 5 . capacitance characteristics figure 6. gate charge characteristics capasistance(pf) 0.1 1 10 100 drain-source voltage C v ds (v) gate-source voltageC v gs (v) 0 0 1 2 4 total gate charge C q g (nc) note:i d =1.0a v ds =120v v ds =300v v ds =480v 0 50 100 200 250 350 c iss c oss c rss c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd notes: 1. v gs =0v 2. f=1 mhz 2 4 6 8 10 12 3 150 300 0.8 0.9 1.1 1.0 -100 -50 0 50 100 200 drain-source breakdown voltage(normalized) C b vdss (v) junction temperature C t j (c) figure 7. breakdown voltage variation vs. temperature drain-source on-resistance (normalized) C r ds(on) (?) figure 8. on-resistance variation vs. temperature junction temperature C t j (c) 1.2 150 notes: 1. v gs =0v 2. i d =250a 0.0 0.5 2.0 1.5 -100 -50 0 50 100 200 3.0 150 notes: 1. v gs =10v 2. i d =0.5a 1.0 2.5 drain current - i d (a) 10 -2 10 -1 10 0 10 0 10 1 10 2 10 3 figure 9-1. max. safe operating area(svf1n60am/d) drain source voltage - v ds (v) 10 1 operation in this area is limited by r ds(on) notes: 1.t c =25c 2.t j =150c 3.single pulse dc 10ms 1ms 100s drain current - i d (a) 10 -2 10 -1 10 0 10 0 10 1 10 2 10 3 figure 9-2. max. safe operating area(svf1n60ab) drain source voltage - v ds (v) 10 1 operation in this area is limited by r ds(on) dc 10ms 1ms 100s notes: 1.t c =25c 2.t j =150c 3.single pulse
silan microelectronics svf1n60am /mj /b/d/ f /h _dat asheet hangzhou silan microelectronics co.,ltd rev: 1. 9 20 1 2.0 .2 h ttp://.silan.com.cn page 5 o 12 typical characteristics ( continued ) 25 50 75 100 125 150 0 0.2 0.4 0.6 1.0 drain current - i d (a) case temperature C t c (c) figure 10. maximum drain current vs. case temperature 0.8 drain current - i d (a) 10 -2 10 -1 10 0 10 0 10 1 10 2 10 3 figure 9-3. max . safe operating area(svf1n60 af) drain source voltage - v ds (v) 10 1 operation in this area is limited by r ds(on ) notes: 1.t c =25c 2.t j =150c 3.single pulse dc 10ms 1ms 100s drain current - i d (a) 10 -2 10 -1 10 0 10 0 10 1 10 2 10 3 figure 9-4. max. safe operating area(svf1n60ah ) drain source voltage - v ds (v) 10 1 notes: 1.t c =25c 2.t j =150c 3.single pulse dc 10ms 1ms 100s operation in this area is limited by r ds(on ) 10 -2 10 -1 10 0 10 0 10 1 10 2 10 3 10 1 operation in this area is limited by r ds(on) notes: 1.t c =25c 2.t j =150c 3.single pulse dc 10ms 1ms 100s drain source voltage - v ds (v) drain current - i d (a) figure 9-5. max . safe operating area(svf1n60amj)
silan microelectronics svf1n60am /mj /b/d/ f /h _dat asheet hangzhou silan microelectronics co.,ltd rev: 1. 9 20 1 2.0 .2 h ttp://.silan.com.cn page 6 o 12 typical test circuit 12v 50k 300nf same type as dut dut v gs 3ma v ds v gs 10v charge qg qgs qgd gate charge test circuit & waveform resistive switching test circuit & waveform v ds v gs r g r l v dd 10v v ds v gs 10% 90% td(on) t on tr td(off) t off t f unclamped inductive switching test circuit & waveform v ds r g v dd 10v l tp i d b vdss i as v dd tp time v ds(t) i d(t) e as = 1 - 2 li as 2 b vdss b vdss v dd dut dut 200nf
silan microelectronics svf1n60am /mj /b/d/ f /h _dat asheet hangzhou silan microelectronics co.,ltd rev: 1. 9 20 1 2.0 .2 h ttp://.silan.com.cn page o 12 package outline to - 251d -3l unit: mm 6.60 to -251j- 3l unit: mm 2.1
silan microelectronics svf1n60am /mj /b/d/ f /h _dat asheet hangzhou silan microelectronics co.,ltd rev: 1. 9 20 1 2.0 .2 h ttp://.silan.com.cn page o 12 package outline (continued) to -92- 3l( 1 ) unit: mm 1.2typ 2.50.30 .550.30 0.60.20 1.30.50 3.3min 3.500.30 1.300.25 0.50.20 .60.3 to -92- 3l( 2 ) unit: mm 2.500.0 .550.30 0.60.20 1.00.5 3.3min 3.500.30 1.300.25 0.50.20 .60.3 1.30.5 1.2typ
silan microelectronics svf1n60am /mj /b/d/ f /h _dat asheet hangzhou silan microelectronics co.,ltd rev: 1. 9 20 1 2.0 .2 h ttp://.silan.com.cn page 9 o 12 package outline (continued) to -220f -3l (1) unit: mm 3.300.25 2.00.30 .20.30 10.030.30 2.550.25 15.50.50 9.00.50 2.5 type 1.max 0.00.15 0.500.15 15.00.50 6.00.30 to -220f -3l (2) unit: mm 3.00.3 2.600.30 .50.3 10.00.5 2.0.3 13.00.5 2.5 0.30 0.650.15 0.60.15 15.00.5 3.90.3 2.
silan microelectronics svf1n60am /mj /b/d/ f /h _dat asheet hangzhou silan microelectronics co.,ltd rev: 1. 9 20 1 2.0 .2 h ttp://.silan.com.cn page 10 o 12 package outline (continued) to -252- 2l (1) unit: mm 6.500.30 5.300.20 2.30 typ 2.00.20 0.500.20 b1 3.0 ref 2.5 to -252- 2l (2) unit: mm note 1
silan microelectronics svf1n60am /mj /b/d/ f /h _dat asheet hangzhou silan microelectronics co.,ltd rev: 1. 9 20 1 2.0 .2 h ttp://.silan.com.cn page 11 o 12 package outline (continued) sot -223- 3l unit: mm 0 10 5.90 6.70 3.00 0.20 7.000 .30 3.500.30 2.30 typ 4.60 0.15 0.25 0.80 1.20 0.300.10 1.600.15 1.650.15 0.70 +0.15 -0.10 0.00 0.20 disclaimer : ? silan reserves the right to make changes to the information herein for th e improvement of the design and performance without further notice! customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. ? all semiconductor products malfunction or fai l with some probability under special conditions. when using silan products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards strictly and take essential measures to avoid situatio ns in which a malfunction or failure of such silan products could cause loss of body injury or damage to property. ? silan will supply the best possible product for customers!
silan microelectronics svf1n60am /mj /b/d/ f /h _dat asheet hangzhou silan microelectronics co.,ltd rev: 1. 9 20 1 2.0 .2 h ttp://.silan.com.cn page 12 o 12 attachment revision history dat e rev description page 2010.09.01 1.0 original 2010.10.21 1.1 modiy the template o datasheet 2010.11.05 1.2 modiy the part no. add soa and i d - t c 2010.11.19 1.3 omit the package o to - 220 - 3l 2011.01. 2 1. modiy package outline 2011.0.2 6 1.5 add the package o to - 220f - 3l 2011.09.16 1 .6 modiy package outline add the package o to - 251d - 3l 2011.1 2.2 1. add the package o sot - 223 - 3l delete the package o to - 251 - 3l 2012.03. 22 1. add the package o to - 251j - 3l 2012.0.2 1.9 modiy electrical characteristics

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